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organic semiconductors

An Organic Borate Salt with Superior p‐Doping Capability for Organic Semiconductors

B. Wegner et al. | Adv. Sci. 7 (2020)

Molecular doping allows enhancement and precise control of electrical properties of organic semiconductors, and is thus of central technological relevance for organic (opto‐) electronics. Beyond single‐component molecular electron acceptors and donors, organic salts have recently emerged as a...

perovskites

Position-locking of volatile reaction products by atmosphere and capping layers slows down photodecomposition of methylammonium lead triiodide perovskite

F. Zu et al. | RSC Adv. 10 (2020)

The remarkable progress of metal halide perovskites in photovoltaics has led to the power conversion efficiency approaching 26%. However, practical applications of perovskite-based solar cells are challenged by the stability issues, of which the most critical one is photo-induced degradation. Bare...

2D semiconductors

Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants

S. Park et al. | Commun. Phys. 2 (2019)

Tuning the Fermi level (EF) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve...

News

New doctoral program “Ciencia y Tecnología de Materiales” at Pontificia Universidad Javeriana

Two speakers from Berlin (HU and HZB) at the inaugural symposium of the new doctoral program “Ciencia y Tecnología de…

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Graduate School „Advanced Materials“: First admission of members

This April, the Graduate School "Advanced Materials" (GS-AM) admitted 22 doctoral students as members, from HU Berlin, FU Berlin, TU…

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Opening Event Graduate School „Advanced Materials“

The opening Event of the Graduate School “Advanced Materials” will be in an electronic format at the end of March.…

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Graduate School "Advanced Materials"

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Integrative Research Institute for the Sciences

Helmholtz-Zentrum Berlin

Department of Physics

Humboldt-Universität zu Berlin